?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB5N60UNDF rev. c0 FGB5N60UNDF 600 v, 5 a short circuit rated april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics notes: 2: mounted on 1? square pcb (fr4 or g-10 material) symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c10 a collector current @ t c = 100 o c5 a i cm (1) pulsed collector current @ t c = 25 o c 15 a i f diode forward current @ t c = 25 o c 5a p d maximum power dissipation @ t c = 25 o c 73.5 w maximum power dissipation @ t c = 100 o c 29.4 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case 1.7 o c / w r ? jc (diode) thermal resistance, junction to case 4.5 o c / w r ? ja thermal resistance, junction to ambient (pcb mount)(2) 40 o c / w g c e collector (flange) to-263ab/d2-pak e g c FGB5N60UNDF 600 v, 5 a short circuit rated igbt features ? short circuit rated 10 us ? high current capability ? high input impedance ? fast switching ?rohs compliant applications ? sewing machine, cnc, home appliances, motor control general description using advanced npt igbt technology, fairchild ? ?s the npt igbts offer the optimum performance for low-power inverter- driven applications where low-lo sses and short-circuit rugged- ness features are essential, such as sewing machine, cnc, motor control and home appliances.
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGB5N60UNDF rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package rel size tape width quantity FGB5N60UNDF FGB5N60UNDF to-263ab/d2-pak - 50 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 5ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 5a , v ge = 15v -1.92.4v i c = 5a , v ge = 15v, t c = 125 o c -2.3- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 181 pf c oes output capacitance - 28 pf c res reverse transfer capacitance - 7 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -5.4 ns t r rise time - 1.9 ns t d(off) turn-off delay time - 25.4 ns t f fall time - 101 202 ns e on turn-on switching loss - 0.08 mj e off turn-off switching loss - 0.07 mj e ts total switching loss - 0.15 mj t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -5.2 ns t r rise time - 2.3 ns t d(off) turn-off delay time - 26.6 ns t f fall time - 125 ns e on turn-on switching loss - 0.15 mj e off turn-off switching loss - 0.09 mj e ts total switching loss - 0.24 mj t sc short circuit withstand time v cc = 350v, r g = 100 ? , v ge = 15v, t c = 150 o c 10 - - ? s
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGB5N60UNDF rev. c0 electrical characteristi cs of the igbt t c = 25c unless otherwise noted electrical characteristi cs of the diode t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 5a, v ge = 15v - 12.1 nc q ge gate to emitter charge - 1.7 nc q gc gate to collector charge - 7.2 nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 5a t c = 25 o c- 1.7 2.2 v t c = 125 o c- 1.6 - t rr diode reverse recovery time i f =5a, di f /dt = 200a/ ? s t c = 25 o c- 35 ns t c = 125 o c- 87 q rr diode reverse recovery charge t c = 25 o c- 71 nc t c = 125 o c - 240 -
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGB5N60UNDF rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.01.53.04.56.07.59.0 0 10 20 30 20v 17v t c = 25 o c 15v v ge = 12v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0.01.53.04.56.07.59.0 0 10 20 30 20v 17v t c = 125 o c 15v v ge = 12v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0123456 0 5 10 15 20 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 03691215 0 5 10 15 20 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 2.5a 10a 5a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 10a 5a i c = 2.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGB5N60UNDF rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 2.5a 10a 5a common emitter t c = 125 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 110 1 10 100 1000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 1 10 100 1000 0.05 0.1 1 10 20 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 5 10 15 0 3 6 9 12 15 common emitter t c = 25 o c 400v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050 1 10 100 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c t d(on) t r gate resistance, r g [ ? ] gate resistance, r g [ ? ]
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGB5N60UNDF rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collector current figure 17. turn off switching figure 18. forward characteristics soa characteristics 246810 0.1 1 10 common emitter v ge = 15v, r g =10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 246810 1 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 50 100 1000 common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ ? ] ? t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 012345 1 10 30 t c = 75 o c t c = 25 o c t c = 125 o c forward voltage, v f [v] forward current, i f [a] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 20
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGB5N60UNDF rev. c0 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figure 23. tran sient thermal impedance of igbt 0 150 300 450 600 0.001 0.01 0.1 1 10 100 t c = 25 o c t c = 125 o c t c = 75 o c reverse recovery currnet, i rr [ua] v r [v] 012345 0.00 0.05 0.10 0.15 0.20 0.25 200a/ ? s 200a/ ? s di/dt = 100a/ ? s di/dt = 100a/ ? s t c = 25 o c t c = 125 o c stored recovery charge, q rr [uc] forwad current, i f [a] 012345 0 30 60 90 120 t c = 25 o c t c = 125 o c di/dt = 100a/ ? s 200a/ ? s di/dt = 100a/ ? s 200a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 0.00001 0.0001 0.001 0.01 0.1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGB5N60UNDF 600 v, 5 a short circuit rated ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGB5N60UNDF rev. c0 mechanical dimensions to-263ab/d 2_ pak
FGB5N60UNDF 600 v, 5 a short circuit rated trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any pr oducts herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i64 tm ? ?2011 fairchild semiconductor corporation 9 www.fairchildsemi.com FGB5N60UNDF rev. c0
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